Enhancement Mode MOSFET (Double N-Channel) 2N7002KDWS Enhancement Mode MOSFET (Double N-Channel) Features  Advanced Trench Process Technology  High density cell design for low RDS(ON)  Very low leakage current in off condition  ESD Protected 2000V HBM  RoHS Compliance SOT-363 Mechanical Data Case: Terminals: Weight: SOT-363, Plastic Package Solderable per MIL-STD-750, Method 2026 0.
006 gram Maximum Ratings (T Ambient=25ºC unless noted otherwise) Symbol Description 2N7002KDWS VDSS VGSS ID IDP PD TJ TSTG ESD Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Drain Current Pulsed Drain Power Dissipation Junction Temperature Storage Temperature Range Gate-Source ES...

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