CYStech Electronics Corp.
Low Vcesat
NPN Epitaxial Planar
Transistor
BTN1101E3
Spec.
No.
: C606E3-A Issued Date : 2005.
01.
03 Revised Date :2008.
01.
30 Page No.
: 1/4
Features
• Low VCE(sat) • High BVCEO • Excellent current gain characteristics • RoHS compliant package
Symbol
BTN1101E3
Outline
TO-220AB
B：Base C：Collector E：Emitter
BCE
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation @ TA=25℃ Power Dissipation @ TC=25℃ Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Junction Temperature Storage Temperature
Note : 1.
Single Puls...