CYStech Electronics Corp.
PNP Epitaxial Planar
Transistor
BTPA56N3
Spec.
No.
: C217N3 Issued Date : 2013.
06.
26 Revised Date : Page No.
: 1/8
Features
• Low VCE(sat), VCE(sat)=-0.
07 V (typ), at IC / IB = -100mA / -10mA • Excellent current gain characteristics • Pb-free lead plating and halogen-free package
Symbol
BTPA56N3
Outline
SOT-23
B：Base C：Collector E：Emitter
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Power Dissipation
Power Dissipation Operating Junction and Storage Temperature Range
Symbol VCBO VCEO VEBO
IC ICP IB
PD
Tj ; Tstg
Limits
-80 -80 -5 ...