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PPM3FD20V1E

Part Number PPM3FD20V1E
Manufacturer Prisemi
Description P-Channel MOSFET
Published Feb 25, 2020
Detailed Description Description The MOSFET provide the best combination of fast switching, low on-resistance and cost-effectiveness. VDS(V)...
Datasheet PPM3FD20V1E




Overview
Description The MOSFET provide the best combination of fast switching, low on-resistance and cost-effectiveness.
VDS(V) -20 MOSFET Product Summary RDS(on)(Ω) ID(mA) 0.
45@ VGS=-4.
5V 0.
62@ VGS=-2.
5V -800 0.
86@ VGS=-1.
8V PPM3FD20V1E P-Channel MOSFET Top View Absolute maximum rating@25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Maximum Power Dissipation (Note 1)(Note 4) Maximum Power Dissipation (Note 2)(Note 4) Pulsed Drain Current(Note 3) Operating Junction Temperature Lead Temperature Storage Temperature Range Continuous Pulsed TA=25°C TA=70°C TA=25°C TA=70°C Symbol VDS VGS ID IDP PD PD IDM TJ TL Tstg Value -20 ±10 -800 -1200 270 170 240 150 -1.
...






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