Part Number
|
C3M0016120K |
Manufacturer
|
CREE |
Description
|
Silicon Carbide Power MOSFET |
Published
|
Mar 2, 2020 |
Detailed Description
|
VDS 1200 V
C3M0016120K
ID @ 25˚C
115 A
Silicon Carbide Power MOSFET TM
C3M MOSFET Technology
RDS(on) 16 ...
|
Datasheet
|
C3M0016120K
|
Overview
VDS 1200 V
C3M0016120K
ID @ 25˚C
115 A
Silicon Carbide Power MOSFET TM
C3M MOSFET Technology
RDS(on) 16 mΩ
N-Channel Enhancement Mode
Features
Package
• 3rd generation SiC MOSFET technology
• Optimized package with separate driver source pin
• 8mm of creepage distance between drain and source
• High blocking voltage with low on-resistance
• High-speed switching with low capacitances
• •
Fast intrinsic diode with low reverse recovery (Qrr) Halogen free, RoHS compliant
Benefits
• Reduce switching losses and minimize gate ringing • Higher system efficiency • Reduce cooling requirements • Increase power density • Increase system switching frequenc...
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