RD120S

RD120E : NEC Type RD2.0E to RD200E Series are planar type zener diode in the popular DO-35 package with DHD (Double Heatsink Diode) construction having allowable power dissipation of 500 mW. To meet various application at customers, Vz (zener voltage) is classified into the tight tolerance under the specific suffix (B, B1 to B7). PACKAGE DIMENSIONS (in millimeters) φ 0.5 25 MIN. Cathode indication • DHD (Double Heatsink Diode) Construction • Vz: Applied E24 standard (RD130E to RD200E: 10 volts step) • DO-35 Glass sealed package φ 2.0 MAX. 25 MIN. ORDER INFORMATION RD2.0 E to RD39E with suffix “B1”, “B2”, “B3”, “B4”, “B5”, “B6” or “B7” should be applied for orders for suffix “B”. APPLICATIONS Cir.

RD120E : These products are zener diodes with an allowable dissipation of 500 mW and a planar type glass sealed DHD (double heatsink diode) structure. PACKAGE DRAWING (Unit: mm) φ 0.5 25 MIN. 4.2 MAX. 25 MIN. FEATURES • The zener voltage series has a wide voltage range of 2 to 120 V and is ideal for standardization. • The E24 series is employed for the zener voltage nominal value. Cathode indication φ 2.0 MAX. ORDERING INFORMATION Any of the B1 to B7 voltage classifications are available for customers who request the B grade product of the RD2.0E to RD39E. Marking color: Black JEDEC: DO-35 APPLICATIONS • Zener voltage and constant-current circuit • Waveform clipper circuit and limiter circuit .

RD120EB : RD2.0E~RD200E ZENER DIODES Features • DHD (Double Heatsink Diode) Construction • Vz: Applied E24 standard (RD130E to RD200E: 10 volts step). • DO-35 Glass sealed package. Applications Circuits for Constant Voltage, Constant Current, Waveform clipper, Surge absorber, etc. Absolute Maximum Ratings (Ta = 25 OC) Parameter Power Dissipation Forward Current Reverse Surge Power at t = 10µs Junction Temperature Storage Temperature Range Symbol Ptot IF PRSM Tj TS Value 500 200 100 175 -65 to +175 Unit mW mA W OC OC РАДИОТЕХ-ТРЕЙД Тел.: (495) 795-0805 Факс: (495) 234-1603 Эл. почта: info@rct.ru Веб: www.rct.ru ® RD2.0E~RD200E Characteristics at Ta = 25 OC Type RD2.0EB RD2.0EB1 RD2.0EB2 RD2.2.

RD120FM : RD2.0FM-RD120FM SURFACE MOUNT SILICON ZENER DIODES VOLTAGE RANGE: 2.0 - 120V POWER: 1.0Wa t t s Features · Complete voltage range 2.0 to 120 volts · High peak reverse power dissipation · High reliability · Low leakage current · Standard zener voltage tolerance is ± 5%. Mechanical Data · Case : SMA (DO-214AC) Molded plastic · Epoxy : UL94V-O rate flame retardant · Lead : Lead formed for Surface mount · Polarity : Color band denotes cathode end · Mounting position : Any · Weight: 0.064 grams (approx.) B A J H G E SMA(DO-214AC) Dim Min Max C A 2.29 2.92 B 4.00 4.60 C 1.27 1.63 D D 0.15 0.31 E 4.80 5.59 G 0.10 0.20 H 0.76 1.52 J 2.01 2.62 All Dimensions in mm Maximum .

RD120FM : These products are zener diodes with an allowable power dissipation of 1 W and a planar type 2 pin power mini mold package. PACKAGE DIMENSION (Unit: mm) 4.7 ±0.3 4.3 ±0.1 R FEATURES • Suitable for high-density mounting because the mounting area is reduced to about 65% compared with that of the 3pin power mini mold RD**P, which has been conventionally used until now. • Achieves flat-surface mounting with a two-pin structure, while having the same Zener voltage classification as that for RD**Ps. APPLICATIONS • Zener voltage and constant-current circuit • Waveform clipper circuit and limiter circuit • Surge absorption circuit 0 to 0.15 1.4 ±0.1 1.3 ±0.2 1.55 ±0.1 Cathode Indication ABSO.

RD120S : Type RD2.0S to RD120S Series are 2 PIN Super Mini Mold Package zener diodes possessing an allowable power dissipation of 200 mW. PACKAGE DIMENSIONS (in millimeter) PACKAGE DIMENSIONS FEATURES • Sharp Breakdown characteristic. • Vz: Applied E24 standard. (in millimeters) 2.5±0.15 1.7±0.1 APPLICATIONS Circuit for Constant Voltage, Constant Current, Wave form Clipper, Surge absorber, etc. 0.19 Cathode Indication ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) Power Dissipation Forward Current Reverse Surge Power Junction Temperature Storage Temperature P IF PRSM Tj Tstg 200 mW 100 mA 85 W (at t=10 µs/1 pulse) Show Fig. 12 150 °C –55 to +150 °C The information in this document is subject to chan.