Features  Advanced Process Technology  Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications  Low EPULSE Rating to Reduce Power Dissipation in PDP Sustain, Energy Recovery and Pass Switch Applications  Low QG for Fast Response  High Repetitive Peak Current Capability for Reliable Operation  Short Fall & Rise Times for Fast Switching  150°C Operating Junction Temperature for Improved Ruggedness  Repetitive Avalanche Capability for Robustness and Reliability IRFI4229PbF HEXFET® Power MOSFET Key Parameters VDS max 250 V VDS (Avalanche) typ.
300 V RDS(ON) typ.
@ 10V 38 m IRP max @ TC= 100°C 32 A TJ max 150 °C G Gate S D G TO-220 Full-Pak...

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