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Part Number
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MTB180A06KH8 |
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Manufacturer
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CYStech |
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Description
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Dual N-Channel Enhancement Mode Power MOSFET |
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Published
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Mar 6, 2020 |
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Detailed Description
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CYStech Electronics Corp.
Spec. No. : C052H8 Issued Date : 2019.09.06 Revised Date : Page No. : 1/ 10
Dual N-Channel E...
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Datasheet
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MTB180A06KH8
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Overview
CYStech Electronics Corp.
Spec.
No.
: C052H8 Issued Date : 2019.
09.
06 Revised Date : Page No.
: 1/ 10
Dual N-Channel Enhancement Mode Power MOSFET
MTB180A06KH8
Features
Low On Resistance Simple Drive Requirement Low Gate Charge Fast Switching Characteristic ESD protected gate Pb-free lead plating and Halogen-free package
BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TC=100°C ID@VGS=10V, TA=25°C ID@VGS=10V, TA=70°C
RDS(ON)@VGS=10V, ID=2.
2A
RDS(ON)@VGS=4.
5V, ID=1.
3A
RDS(ON)@VGS=3.
3V, ID=1A
60V 8.
05A 5.
09A 2.
3A 1.
8A 172mΩ(typ) 204mΩ(typ) 390mΩ(typ)
Equivalent Circuit
MTB180A06KH8
Outline
Pin 1
DFN5×6 Pin 1
G：Gate D：Drain S：Source
Ordering Information
Device MTB180A06KH8-0-T6-G
MTB...
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