Silan Microelectronics
SVF3878AP7_Datasheet
9A, 900V N-CHANNEL MOSFET
DESCRIPTION
SVF3878AP7 is an N-channel enhancement mode power MOS field effect
transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology.
The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are widely used in AC-DC power supplies, DC-DC converters and H-bridge PWM motor drivers.
FEATURES
9A, 900V, RDS(on) (typ.
)=1.
0@VGS=10V Low gate charge Low Crss Fast switching Improved dv/dt capability
2.
Dr...