SVS11N60D/F/S/FJ/T/KD2_Datasheet
11A, 600V DP MOS POWER
TRANSISTOR
DESCRIPTION
SVS11N60D/F/S/FJ/T/KD2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s DP MOS technology.
It achieves low conduction loss and switching losses.
It leads the design engineers to their power converters with high efficiency, high power density, and superior thermal behavior.
Furthermore, it’s universal applicable, i.
e.
, suitable for hard and soft switching topologies.
FEATURES
11A,600V, RDS(on)(typ.
)=0.
3@VGS=10V New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated High peak current capability
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