Part Number
|
MTB010A03H8 |
Manufacturer
|
CYStech |
Description
|
Dual N-Channel Enhancement Mode Power MOSFET |
Published
|
Mar 11, 2020 |
Detailed Description
|
CYStech Electronics Corp.
Spec. No. : C430H8 Issued Date : 2018.07.24 Revised Date : 2018.07.25 Page No. : 1/ 10
Dual ...
|
Datasheet
|
MTB010A03H8
|
Overview
CYStech Electronics Corp.
Spec.
No.
: C430H8 Issued Date : 2018.
07.
24 Revised Date : 2018.
07.
25 Page No.
: 1/ 10
Dual N-Channel Enhancement Mode Power MOSFET
MTB010A03H8
Features
Low On Resistance Simple Drive Requirement Low Gate Charge Fast Switching Characteristic Pb-free lead plating and Halogen-free package
BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TC=100°C ID@VGS=10V, TA=25°C ID@VGS=10V, TA=70°C
RDS(ON)@VGS=10V, ID=12A
RDS(ON)@VGS=4.
5V, ID=7A
30V 36A 23A 8.
8A 7.
0A 7.
3mΩ(typ) 9.
6mΩ(typ)
Equivalent Circuit
MTB010A03H8
Outline
Pin 1
DFN5×6 Pin 1
G:Gate D:Drain S:Source
Ordering Information
Device MTB010A03H8-0-T6-G
Package DFN 5 ×6 (Pb-free lead plating and halogen-free p...
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