Part Number
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WFD7N65L |
Manufacturer
|
WINSEMI |
Description
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Silicon N-Channel MOSFET |
Published
|
Mar 18, 2020 |
Detailed Description
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WFD7N65L Product Description
Silicon N-Channel MOSFET
Features
� 7A,650V,RDS(on)(TYP:1.0Ω)@VGS=10V � Ultra-low Gate Char...
|
Datasheet
|
WFD7N65L
|
Overview
WFD7N65L Product Description
Silicon N-Channel MOSFET
Features
� 7A,650V,RDS(on)(TYP:1.
0Ω)@VGS=10V � Ultra-low Gate Charge(Typical 21nC) � Fast Switching Capability � 100%Avalanche Tested � Improved dv/dt capability
General Description
This Power MOSFET is produced using advanced planar stripe,VDMOS technology.
This technology has been especially designed to minimize on -state resistance,have a high rugged avalanche characteristics.
This devices is specially well suited for high efficiency switch mode power supplies , power factor correction, UPS and a electronic lamp ballast base on half bridge.
D
G S
Absolute Maximum Ratings
Symbol
Parameter
VDSS ID
Drain Source Voltage Continuous Dra...
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