|
Part Number
|
WFF2N65B |
|
Manufacturer
|
Winsemi |
|
Description
|
Silicon N-Channel MOSFET |
|
Published
|
Mar 18, 2020 |
|
Detailed Description
|
Features
� 2A,650V(Type),RDS(on)(Max 5Ω)@VGS=10V � Ultra-low Gate Charge(Typical 9.0nC) � Fast Switching Capability � 10...
|
|
Datasheet
|
WFF2N65B
|
Overview
Features
� 2A,650V(Type),RDS(on)(Max 5Ω)@VGS=10V � Ultra-low Gate Charge(Typical 9.
0nC) � Fast Switching Capability � 100%Avalanche Tested � Isolation Voltage(VISO=4000V AC) � Maximum Junction Temperature Range(150℃)
WFF2N65B
Silicon N-Channel MOSFET
General Description
This Power MOSFET is produced using Winsemi's advanced planar stripe,VDMOS technology.
This latest technology has been especially designed to minimize on -state resistance,have a high rugged avalanche characteristics.
This devices is specially well suited for high efficiency switch mode power supply .
Absolute Maximum Ratings
Symbol
Parameter
VDSS ID
Drain Source Voltage Continuous Drain Current(@Tc=25℃) Continuous Dra...
Similar Datasheet