FDG6322C Dual N & P Channel Digital FET
General Description
These dual N & P-Channel logic level enhancement mode field effect
transistors are produced using ON Semiconductor's proprietary, high cell density, DMOS technology.
This very high density process is especially tailored to minimizeon-state resistance.
This device has been designed especially for low voltage applications as a replacement for bipolar digital
transistors and small signal MOSFETs.
Since bias resistors are not required, this dual digital FET can replace several different digital
transistors, with different bias resistor values.
Features
N-Ch 0.
22 A, 25 V, RDS(ON) = 4.
0 Ω @ VGS= 4.
5 V, RDS(ON) = 5.
0 Ω @ VGS= 2.
7 V.
P-Ch ...