STGP20M65DF2 Datasheet Trench gate field-stop, 650 V, 20 A, M series low-loss IGBT TAB TO-220 1 23 Features • High short-circuit withstand time • VCE(sat) = 1.
55 V (typ.
) @ IC = 20 A • Tight parameters distribution • Safer paralleling • Low thermal resistance • Soft and very fast recovery antiparallel diode G(1) C(2, TAB) Applications • Motor control • UPS • PFC • General-purpose inverters Description E(3) NG1E3C2T This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure.
The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit function...

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