NTHS4166N MOSFET – Power, Single, N-Channel, ChipFET Package 30 V, 8.
2 A Features • Trench Technology • Low RDS(on) to Minimize Conduction Losses • Leadless ChipFET Package has 40% Smaller Footprint than TSOP−6 • Excellent Thermal Capabilities This is a Pb−Free Device Applications • Load Switching • DC−DC Converters • Low Side Switching MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current RqJA (Note 1) Power Dissipation RqJA (Note 1) Continuous Drain Current RqJA (Note 2) Power Dissipation RqJA (Note 2) Continuous Drain C(Nuortreen1t)RqJA, t v 5 s Power Dissipation RqJA (Note 1) Stead...

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