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Part Number
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FGY75T95LQDT |
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Manufacturer
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ON Semiconductor |
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Description
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IGBT |
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Published
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Apr 1, 2020 |
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Detailed Description
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IGBT - Field Stop, Trench
75 A, 950 V
Product Preview FGY75T95LQDT
Trench Field Stop 4th generation Low Vcesat IGBT co−...
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Datasheet
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FGY75T95LQDT
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Overview
IGBT - Field Stop, Trench
75 A, 950 V
Product Preview FGY75T95LQDT
Trench Field Stop 4th generation Low Vcesat IGBT co−packaged with full current rated diode.
Features
• Maximum Junction Temperature : TJ = 175℃ • Positive Temperature Co−efficient for Easy Parallel Operating • High Current Capability • Low Saturation Voltage: VCE(Sat) = 1.
31 V (Typ.
) @ IC = 75 A • Fast Switching • Tighten Parameter Distribution • These Devices are Pb−Free and are RoHS Compliant
Applications
• Solar Inverter
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector to Emitter Voltage
Gate to Emitter Voltage Transient Gate to Emitter Voltage
VCES VGES
950
V
±20
V
±30
Collector Current
@TC = 25°C
IC
...
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