Part Number | CY7C1041BN |
Manufacturer | Cypress Semiconductor |
Title | 256K x 16 Static RAM |
Description | The CY7C1041BN is a high-performance CMOS static RAM organized as 262,144 words by 16 bits. Writing to the device is accomplished by taking Chip E... |
Features |
■ Temperature range: ❐ Commercial: 0 °C to 70 °C ❐ Automotive-A: –40 °C to 85 °C ■ High speed ❐ tAA = 15 ns ■ Low active power ■ Low CMOS standby power ❐ 2.75 mW (max.) ■ 2.0 V data retention (400 W at 2.0 V retention) ■ Automatic power-down when deselected ■ TTL-compatible inputs and outputs ■ Eas... |
File Size | 442.50KB |
Datasheet |
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CY7C1041B : of read and write modes. The input/output pins (I/O0 through I/O15) are placed in a high-impedance state when the device is deselected (CE HIGH), the outputs are disabled (OE HIGH), the BHE and BLE are disabled (BHE, BLE HIGH), or during a write operation (CE LOW, and WE LOW). The CY7C1041B is available in a standard 44-pin 400-mil-wide body width SOJ and 44-pin TSOP II package with center power and ground (revolutionary) pinout. Functional Description The CY7C1041B is a high-performance CMOS static RAM organized as 262,144 words by 16 bits. Writing to the device is accomplished by taking Chip Enable (CE) and Write Enable (WE) inputs LOW. If Byte Low Enable (BLE) is LOW, then data from I/O .
CY7C1041BV33 : of read and write modes. The input/output pins (I/O0 through I/O15) are placed in a high-impedance state when the device is deselected (CE HIGH), the outputs are disabled (OE HIGH), the BHE and BLE are disabled (BHE, BLE HIGH), or during a write operation (CE LOW, and WE LOW). The CY7C1041BV33 is available in a standard 44-pin 400-mil-wide body width SOJ and 44-pin TSOP II package with center power and ground (revolutionary) pinout. Functional Description The CY7C1041BV33 is a high-performance CMOS Static RAM organized as 262,144 words by 16 bits. Writing to the device is accomplished by taking Chip Enable (CE) and Write Enable (WE) inputs LOW. If Byte Low Enable (BLE) is LOW, then data fro.