| Part Number | STGB30H60DFB |
| Manufacturer | STMicroelectronics |
| Title | IGBT |
| Description | These devices are IGBTs developed using an advanced proprietary trench gate fieldstop structure. These devices are part of the new HB series of IG... |
| Features |
• Maximum junction temperature: TJ = 175 °C • High speed switching series • Minimized tail current • Low saturation voltage: VCE(sat) = 1.55 V (typ.) @ IC = 30 A • Tight parameter distribution • Safe paralleling • Positive VCE(sat) temperature coefficient • Low thermal resistance • Very fast soft re... |
| File Size | 819.52KB |
| Datasheet |
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STGB30H60DF : This device is an IGBT developed using an advanced proprietary trench gate and field stop structure. This IGBT series offers the optimum compromise between conduction and switching losses, maximizing the efficiency of very high frequency converters. Furthermore, a positive VCE(sat) temperature coefficient and very tight parameter distribution result in easier paralleling operation. E (3) Order codes STGB30H60DF STGF30H60DF STGP30H60DF STGW30H60DF Table 1. Device summary Marking Package GB30H60DF D²PAK GF30H60DF TO-220FP GP30H60DF TO-220 GW30H60DF TO-247 Packaging Tape and reel Tube March 2013 This is information on a product in full production. DocID022363 Rev 3 1/24 www.st..