| Part Number | R6011KNJ |
| Manufacturer | ROHM |
| Title | Power MOSFET |
| Description | R6011KNJ Nch 600V 11A Power MOSFET VDSS RDS(on)(Max.) ID PD 600V 0.39Ω ±11A 124W lFeatures 1) Low on-resistance. 2) Ultra fast switching spee... |
| Features |
1) Low on-resistance. 2) Ultra fast switching speed. 3) Parallel use is easy. 4) Pb-free lead plating ; RoHS compliant
lOutline
TO-263S
SC-83
LPT(S)
lInner circuit
Datasheet
lPackaging specifications Packing
Embossed Tape
Reel size (mm)
330
lApplication Switching
Type Tape widt...
|
| File Size | 1.41MB |
| Datasheet |
|
R6011KNX : R6011KNX Nch 600V 11A Power MOSFET Datasheet lOutline VDSS 600V RDS(on)(Max.) 0.39Ω ID ±11A TO-220FM PD 53W lFeatures 1) Low on-resistance 2) Ultra fast switching 3) Parallel use is easy 4) Pb-free plating ; RoHS compliant lInner circuit lApplication Switching lPackaging specifications Code Packing C7 G Tube C7 Tube* - (Blank) Bulk* *Package dimensions are different lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified) Parameter Symbol Value Unit Drain - Source voltage Continuous drain current Pulsed drain current VDSS ID*1 IDP*2 600 V ±11 A ±33 A Gate - Source voltage static AC(f＞1Hz) VGSS ±20 V ±30 V Avalanche cur.
R6011KNX : ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 11 A IDM Drain Current-Single Pluse 22 A PD Total Dissipation @TC=25℃ 53 W TJ Max. Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 2.4 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor R6011KNX ELECTRICAL CHARACTERISTICS TC=25℃ unless oth.