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VB60170G-E3
Vishay General Semiconductor
Dual High Voltage Trench MOS Barrier
Schottky Rectifier
Ultra Low VF = 0.
50 V at IF = 5 A
TMBS ®
D2PAK (TO-263AB) K
2
1 VB60170G
PIN 1
K
PIN 2
HEATSINK
DESIGN SUPPORT TOOLS click logo to get started
Models
Available
PRIMARY CHARACTERISTICS
IF(AV) VRRM IFSM VF at IF = 30 A TJ max.
Package
2 x 30 A 170 V 210 A 0.
72 V 175 °C
D2PAK (TO-263AB)
Circuit configuration
Common cathode
FEATURES • Trench MOS
Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020,
LF maximum peak of 245 °C • Material categorization: for definitions of compliance
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