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V35PW12

Part Number V35PW12
Manufacturer Vishay
Description Trench MOS Barrier Schottky Rectifier
Published May 4, 2020
Datasheet V35PW12




Features

• Very low profile - typical height of 1.3 mm
• Trench MOS Schottky technology
• Ideal for automated placement
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C
• AE...






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