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V10K60DU
Vishay General Semiconductor
High Current Density Surface-Mount Trench MOS Barrier
Schottky Rectifier
Ultra Low VF = 0.
39 V at IF = 2.
5 A
8 7 6 5
FlatPAK 5 x 6
1 and / or 2 3 and / or 4
7, 8 5, 6
1 2
3 4
DESIGN SUPPORT TOOLS click logo to get started
FEATURES
• Trench MOS
Schottky technology
Available
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C
• AEC-Q101 qualified available - Automotive ordering code: base P/NHM3
• Material categorization: for definitions of compliance please see www.
vishay.
com/doc?99912
TYPICAL APPLICATIONS
For use in low voltage high frequenc...