NXP Semiconductors Technical Data
RF Power LDMOS
Transistor
N--Channel Enhancement--Mode Lateral MOSFET
The 250 W CW RF power
transistor is designed for industrial, scientific, medical (ISM) and industrial heating applications at 2450 MHz.
This device is
suitable for use in CW, pulse and linear applications.
This high gain, high
efficiency rugged device is targeted to replace industrial magnetrons and will provide longer life and easier servicing.
Typical Performance: In 2400–2500 MHz reference circuit, VDD = 32 Vdc
Frequency
Pin Gps D Pout
(MHz)
Signal Type
(W)
(dB)
(%)
(W)
2400 2450 2500
CW 9.
0 14.
5 55.
5 255 9.
0 14.
7 54.
8 263 9.
0 14.
3 55.
5 242
Load Mismatch/Ruggedness
Frequ...