Part Number
|
VS-GT300YH120N |
Manufacturer
|
Vishay |
Description
|
DIAP Trench IGBT |
Published
|
May 5, 2020 |
Detailed Description
|
www.vishay.com
VS-GT300YH120N
Vishay Semiconductors
DIAP Trench IGBT Power Module - 1200 V, 300 A Current Fed Inverter...
|
Datasheet
|
VS-GT300YH120N
|
Overview
www.
vishay.
com
VS-GT300YH120N
Vishay Semiconductors
DIAP Trench IGBT Power Module - 1200 V, 300 A Current Fed Inverter Topology
PRIMARY CHARACTERISTICS
IGBT
VCES
1200 V
VCE(on) (typical) at 300 A, 25 °C
1.
93 V
ID(DC) at TC = 80 °C
300 A
HEXFRED® SERIES DIODE
VR 1200 V
VF (typical) at 300 A, 25 °C
1.
99 V
IF(DC) at 80 °C
300 A
IGBT AND HEXFRED® SERIES DIODE
VCE(on) + VF typical at 300 A
3.
92 V
HEXFRED® ANTIPARALLEL DIODE
VF (typical) at 10 A, 25 °C IF(DC) at 88 °C Package
1.
6 V 40 A Dual INT-A-PAK
FEATURES
• 1200 V IGBT trench and field stop technology with positive temperature coefficient
• Low switching losses • Maximum junction temperature 175 °C • 10 μs short circuit...
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