Freescale Semiconductor Technical Data
RF Power LDMOS
Transistors
High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs
These high ruggedness devices are designed for use in high VSWR industrial (including laser and plasma exciters), broadcast (analog and digital), aerospace
and radio/land mobile applications.
They are unmatched input and output
designs allowing wide frequency range utilization, between 1.
8 and 600 MHz.
Typical Performance: VDD = 50 Volts, IDQ = 100 mA
Signal Type
Pout (W)
f (MHz)
Gps (dB)
D (%)
Pulse (100 sec, 20% Duty Cycle)
CW
1250 Peak 1250 CW
230 230
24.
0 74.
0 22.
9 74.
6
Document Number: MRFE6VP61K25H Rev.
4.
1, 3/2014
MRFE6VP61K25HR6 MRFE6VP61K25H...