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SiZ980BDT
Vishay Siliconix
Dual N-Channel 30 V (D-S) MOSFET with
Schottky Diode
PowerPAIR® 6 x 5 G2
S2
S2 S2 6
7
8
5 S1/D2
(Pin 9)
6 mm 1 5 mm
Top View
D1 1
4 D1
3 D1
2 D1
G1
Bottom View
PRODUCT SUMMARY
VDS (V) RDS(on) max.
(Ω) at VGS = 10 V RDS(on) max.
(Ω) at VGS = 4.
5 V Qg typ.
(nC) ID (A) a
Configuration
CHANNEL-1 CHANNEL-2
30 30
0.
00439
0.
00106
0.
00712
0.
00172
5.
7 24.
2
54.
8 197
Dual plus integrated
Schottky (SkyFET)
FEATURES • TrenchFET® Gen IV power MOSFET • SkyFET® low side MOSFET with integrated
Schottky
• Very low RDS x Qg FOM improves efficiency • 100 % Rg and UIS tested • Material categorization: for definitions of compliance
please see ww...