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MG6403WZ

Part Number MG6403WZ
Manufacturer ROHM
Description Insulated Gate Bipolar Transistor
Published May 9, 2020
Detailed Description MG6403WZ 650V 80A Insulated Gate Bipolar Transistor VCES IC (Nominal) VCE(sat) (Typ.) Max. Possible Chips per Wafer 65...
Datasheet MG6403WZ





Overview
MG6403WZ 650V 80A Insulated Gate Bipolar Transistor VCES IC (Nominal) VCE(sat) (Typ.
) Max.
Possible Chips per Wafer 650V 80A 1.
5V 444pcs lFeatures 1) Trench Light Punch Through Type 2) Low Collector - Emitter Saturation Voltage 3) High Speed Switching & Low Switching Loss 4) Short Circuit Withstand Time 2μs lOutline Wafer lInner Circuit (1) (2) (3) lApplication Solar Inverter UPS Welding IH PFC Datasheet (1) Gate (2) Collector (3) Emitter lAbsolute Maximum Ratings (at TC = 25°C unless otherwise specified) Parameter Symbol Collector - Emitter Voltage VCES Gate - Emitter Voltage Collector Current Pulsed Collector Current Operating Junction Temperature VGES IC*1 ICP*2 Tj *1 De...






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