P1503BLH N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 15mΩ @VGS = 10V ID 12A SOT- 223 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 100 °C ID IDM 12 9.
9 40 Avalanche Current IAS 19 Avalanche Energy L = 0.
1mH EAS 18 Power Dissipation3 TA = 25 °C TA = 100 °C PD 3.
9 2.
5 Operating Junction & Storage Temperature Range TJ, TSTG -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM Junction-to-Ambient2 t ≦10s RqJA 32 Junction-to-Ambient2 Steady-S...

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