CTH1706PS-T52 P-Channel Enhancement MOSFET
Features
Drain-Source Breakdown Voltage VDSS-60V Drain-Source On-Resistance
RDS(ON) 65m, at VGS= -10V, ID= -20A RDS(ON) 80m, at VGS= -4.
5V, ID= -16A
Continuous Drain Current at TC=25℃ID =-17A Advanced high cell density Trench Technology RoHS Compliance & Halogen Free
Description
The CTH1706PS-T52 is the P-Channel logic enhancement mode power field effect
transistors are produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
Applications
Switching Applications DC/DC Converter IPC
Package Outline
Schematic
Drain
Gate
Source
Drain Gate
Source...