CTL0322PS-R3 P-Channel Enhancement MOSFET
Features
• Drain-Source Breakdown Voltage VDSS -20 V • Drain-Source On-Resistance
RDS(ON) 55mΩ, at VGS= -4.
5V, ID= -3.
2A RDS(ON) 70mΩ, at VGS= -2.
5V, ID= -2.
4A RDS(ON) 100mΩ, at VGS= -1.
8V, ID= -1.
7A
℃• Continuous Drain Current at TA=25 ID = -3.
2A
• Advanced high cell density Trench Technology • RoHS Compliance & Halogen Free
Description
The CTL0322PS-R3 is the P-Channel logic enhancement mode power field effect
transistors are produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
Applications
• Power Management • Lithium Ion Battery • High-Side Switching
Packag...