CTL0196PS-R3 P-Channel Enhancement MOSFET
Features
• Drain-Source Breakdown Voltage VDSS -60 V • Drain-Source On-Resistance
RDS(ON) 170mΩ, at VGS= -10V, ID= -1.
8A RDS(ON) 200mΩ, at VGS= -4.
5V, ID= -1.
4A
℃• Continuous Drain Current at TC=25 ID = -1.
9A
• Advanced high cell density Trench Technology • RoHS Compliance & Halogen Free
Description
The CTL0196PS-R3 is the P-Channel logic enhancement mode power field effect
transistors are produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
Applications
• Power Management • Battery Powered System • DC/DC Converter • Load Switch • DSC • LCD Display inverter
Pack...