CT3401-R3 P-Channel Enhancement MOSFET Features • Drain-Source Breakdown Voltage VDSS - 30 V • Drain-Source On-Resistance RDS(ON) 53mΩ, at VGS= - 10V, IDS= - 4.
1A RDS(ON) 64mΩ, at VGS= - 4.
5V, IDS= - 4.
0A RDS(ON) 86mΩ, at VGS= - 2.
5V, IDS= - 1.
0A ℃• Continuous Drain Current at TA=25 ID = - 4.
1A • Advanced high cell density Trench Technology • RoHS Compliance & Halogen Free Applications • Power Management • LCD Display inverter • Load Switch Description The CT3401-R3 uses high performance Trench Technology to provide excellent RDS(ON) and low gate charge which is suitable for low voltage application.
Package Outline Schematic Drain Gate Source Drain Gate Source CT Micro Proprietary...

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