CTL0404NS-R3 N-Channel Enhancement MOSFET
Features
• Drain-Source Breakdown Voltage VDSS 40 V • Drain-Source On-Resistance
RDS(ON) 32mΩ, at VGS= 10V, ID= 4.
0A RDS(ON) 50mΩ, at VGS= 4.
5V, ID= 3.
0A
℃• Continuous Drain Current at TA=25 ID =4.
0A
• Advanced high cell density Trench Technology • RoHS Compliance & Halogen Free
Description
The CTL0404NS-R3 is the N-Channel logic enhancement mode power field effect
transistors are produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
Applications
• Power Management • Portable Equipment • DC/DC Converter • Load Switch
Package Outline
Schematic
Drain
Drain
Gate...