CTL505NS10-T52 N-Channel Enhancement MOSFET
Features
Drain-Source Breakdown Voltage VDSS 100V Drain-Source On-Resistance
RDS(ON) 14m, at VGS= 10V, ID= 25A
Continuous Drain Current at TC=25℃ID =50.
5A Advanced high cell density Trench Technology RoHS Compliance & Halogen Free
Description
The CTL505NS10-T52 is the N-Channel logic enhancement mode power field effect
transistors are produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application.
Applications
DC/DC Converter Load Switch Power Management
Package Outline
Schematic
Drain...