CTL0642NS-R3 N-Channel Enhancement MOSFET
Features
• Drain-Source Breakdown Voltage VDSS 20 V • Drain-Source On-Resistance
RDS(ON) 17mΩ, at VGS= 4.
5V, IDS= 6.
4A RDS(ON) 20mΩ, at VGS= 2.
5V, IDS= 5.
5A RDS(ON) 25mΩ, at VGS= 1.
8V, IDS= 5.
0A
℃• Continuous Drain Current at TA=25 ID = 6.
4A
• Advanced high cell density Trench Technology • RoHS Compliance & Halogen Free • ESD protection
Applications
• Power Management • Battery Powered System • Portable Equipment • DC/DC Converter
Package Outline
Description
The CTL0642NS-R3 is the N-Channel logic enhancement mode power field effect
transistors are produced using high cell density, DMOS trench technology.
This high density process is especially tai...