CTL0343NS-R3 N-Channel Enhancement MOSFET
Features
Drain-Source Breakdown Voltage VDSS -20 V Drain-Source On-Resistance
RDS(ON) 58m, at VGS= 10V, ID= 3.
4A RDS(ON) 66m, at VGS= 4.
5V, ID= 2.
7A RDS(ON) 88m, at VGS= 2.
5V, ID= 1.
0A
Continuous Drain Current at TC=25℃ID = -3.
1A Advanced high cell density Trench Technology RoHS Compliance & Halogen Free
Description
The CTL0343NS-R3 is the N-Channel logic enhancement mode power field effect
transistors are produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and ...