CTH4106NS-T52 N-Channel Enhancement MOSFET Features  Drain-Source Breakdown Voltage VDSS = 60V  Drain-Source On-Resistance RDS(ON) 16m, at VGS= 10V, ID= 50A  Continuous Drain Current at TC=25℃ID = 41A  Advanced high cell density Trench Technology  RoHS Compliance & Halogen Free Description The CTH4106NS –T52 uses high performance Trench Technology to provide excellent RDS(ON)and low gate charge which is suitable for most of the synchronous buck converter applications .
Applications  Notebook  High side switching  Power Management Package Outline Drain Gate Source Schematic Drain Gate Source CT Micro Proprietary & Confidential Page 1 Rev 2 Jun, 2015 CTH4106NS-T52 N-Channe...

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