High Speed Half-Bridge Driver for GaN Power Switches
NCP51820
The NCP51820 high−speed, gate driver is designed to meet the stringent requirements of driving enhancement mode (e−mode), high electron mobility
transistor (HEMT) and gate injection
transistor (GIT), gallium nitrade (GaN) power switches in off−line, half−bridge power topologies.
The NCP51820 offers short and matched propagation delays with advanced level shift technology providing −3.
5 V to +650 V (typical) common mode voltage range for the high−side drive and −3.
5 V to +3.
5 V common mode voltage range for the low−side drive.
In addition, the device provides stable dV/dt operation rated up to 200 V/ns for both driver output stages...