SEMICONDUCTOR
TECHNICAL DATA
KPM15N60F
N CHANNEL MOS FIELD EFFECT
TRANSISTOR
General Description
This Super Junction MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge, low EMI characteristics and excellent avalanche characteristics.
It is mainly suitable for active power factor correction and switching mode power supplies.
FEATURES VDSS=600V, ID=15A Drain-Source ON Resistance : RDS(ON)(Max)=0.
28 @VGS=10V Qg(typ.
)= 32nC
MAXIMUM RATING (Tc=25 )
CHARACTERISTIC
SYMBOL
RATING
Drain-Source Voltage
VDSS
600
Gate-Source Voltage
VGSS
30
TC=25
Drain Current TC=100
Pulsed (Note1)
Single Pulsed Avalanche Energy (Note 2)
Repetitive Avalan...