Elektronische Bauelemente SJP110SN10J-C 110A, 100V, RDS(ON) 5m N-Channel Shielded Gate Trench Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION SJP110SN10J-C uses Shielded Gate Trench Technology and design to provide excellent RDS(ON) with low gate charge.
It can be used in a wide variety of applications.
DFN5x6-8J FEATURES  High density cell design for ultra low RDS(ON)  High Power and current handing capability  Load switch  Good stability and uniformity with high EAS  Excellent package for good heat dissipation APPLICATIONS  SMPS and general purpose applications  Hard switched and high frequency circuits  Uninterruptible Power Sup...

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