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V10P45S-M3

Part Number V10P45S-M3
Manufacturer Vishay
Description Trench MOS Barrier Schottky Rectifier
Published Jun 8, 2020
Detailed Description www.vishay.com V10P45S-M3 Vishay General Semiconductor SMD Photovoltaic Solar Cell Protection TMBS® (Trench MOS Barrie...
Datasheet V10P45S-M3




Overview
www.
vishay.
com V10P45S-M3 Vishay General Semiconductor SMD Photovoltaic Solar Cell Protection TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.
34 V at IF = 5 A eSMP® Series K 1 2 SMPC (TO-277A) K Cathode Anode 1 Anode 2 PRIMARY CHARACTERISTICS IF(AV) 10 A VRRM 45 V IFSM 180 A VF at IF = 10 A 0.
41 V TJ max.
Package Circuit configuration 150 °C SMPC (TO-277A) Single ADDITIONAL RESOURCES 3D 3D 3D Models FEATURES • Very low profile - typical height of 1.
1 mm • Ideal for automated placement • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Mater...






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