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V30DM150C

Part Number V30DM150C
Manufacturer Vishay
Description Trench MOS Barrier Schottky Rectifier
Published Jun 8, 2020
Detailed Description www.vishay.com V30DM150C Vishay General Semiconductor Dual High-Voltage TMBS® (Trench MOS Barrier Schottky) Rectifier ...
Datasheet V30DM150C





Overview
www.
vishay.
com V30DM150C Vishay General Semiconductor Dual High-Voltage TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.
57 V at IF = 5.
0 A eSMP® Series SMPD (TO-263AC) K 1 2 Top View Bottom View Anode 1 Anode 2 K Cathode FEATURES • Trench MOS Schottky technology Available • Very low profile - typical height of 1.
7 mm • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available: - Automotive ordering code: base P/NHM3 • Material categorization: for definitions of compliance please see www.
vishay.
com/doc?99912 DESIGN SUPPORT ...






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