| Part Number | V2PM10 |
| Manufacturer | Vishay |
| Title | Surface Mount Trench MOS Barrier Schottky Rectifier |
| Description | www.vishay.com V2PM10 Vishay General Semiconductor Surface Mount Trench MOS Barrier Schottky Rectifier TMBS® eSMP® Series Top View Bottom Vie... |
| Features |
• Very low profile - typical height of 0.65 mm Available • Ideal for automated placement • Trench MOS Schottky technology • Low forward voltage drop • Low power loss, high efficiency • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available - Automotive or... |
| File Size | 98.71KB |
| Datasheet |
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V2PM12 : www.vishay.com V2PM12 Vishay General Semiconductor Surface Mount Trench MOS Barrier Schottky Rectifier TMBS® eSMP® Series Top View Bottom View MicroSMP (DO-219AD) Anode Cathode DESIGN SUPPORT TOOLS click logo to get started Models Available PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM 2A 120 V 30 A VF at IF = 2 A (125 °C) 0.65 V TJ max. Package 175 °C MicroSMP (DO-219AD) Circuit configuration Single FEATURES • Very low profile - typical height of 0.65 mm Available • Ideal for automated placement • Trench MOS Schottky technology • Low forward voltage drop • Low power loss, high efficiency • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified.
V2PM15 : www.vishay.com V2PM15 Vishay General Semiconductor Surface Mount Trench MOS Barrier Schottky Rectifier TMBS® eSMP® Series Top View Bottom View MicroSMP (DO-219AD) Anode Cathode DESIGN SUPPORT TOOLS click logo to get started Models Available PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM 2A 150 V 30 A VF at IF = 2 A (125 °C) 0.68 V TJ max. Package 175 °C MicroSMP (DO-219AD) Circuit configuration Single FEATURES • Very low profile - typical height of 0.65 mm Available • Ideal for automated placement • Trench MOS Schottky technology • Low forward voltage drop • Low power loss, high efficiency • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified.