IGC100T65T8RM IGBT3 Chip Medium Power Features:  650V Trench & Field Stop technology  high short circuit capability, self limiting short circuit current  positive temperature coefficient  easy paralleling  Qualified according to JEDEC for target applications Recommended for:  power modules Applications:  drives Chip Type IGC100T65T8RM VCE 650V ICn 200A Die Size 9.
73 x 10.
23 mm2 C G E Package sawn on foil Mechanical Parameters Die size Emitter pad size (incl.
gate pad) Gate pad size Area total Thickness Wafer size Max.
possible chips per wafer Passivation frontside Pad metal Backside metal 9.
73 x 10.
23 See chip drawing 1.
615 x 0.
817 99.
5 80 200 259 Photoimide 3200 nm AlSiCu Ni...

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