High Speed IGBT3 Chip IGC10T65QE Features:  650V Trench & Field Stop technology  high speed switching series third generation  low VCE(sat)  low EMI  low turn-off losses  positive temperature coefficient  qualified according to JEDEC for target applications Recommended for:  discrete components and modules Applications:  uninterruptible power supplies  welding converters  converters with high switching frequency C G E Chip Type VCE ICn1) Die Size Package IGC10T65QE 650V 20A 3.
19 x 3.
21mm2 sawn on foil 1 ) nominal collector current at Tc = 100°C, not subject to production test - verified by design/characterization Mechanical Parameters Die size Emitter pad size Gate pa...

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