Part Number
|
SIDC10D120H8 |
Manufacturer
|
Infineon |
Description
|
Fast switching diode |
Published
|
Jun 10, 2020 |
Detailed Description
|
SIDC10D120H8
Fast switching diode chip in Emitter Controlled Technology
Features:
1200V Emitter Controlled technolog...
|
Datasheet
|
SIDC10D120H8
|
Overview
SIDC10D120H8
Fast switching diode chip in Emitter Controlled Technology
Features:
1200V Emitter Controlled technology 120 µm chip
Soft, fast switching Low reverse recovery charge Small temperature coefficient Qualified according to JEDEC for target
applications
Recommended for:
Power modules and discrete devices
Applications:
SMPS, resonant applications, drives
Chip Type
VR
IFn
SIDC10D120H8 1200V 15A
Die Size 3.
2 x 3.
2 mm2
Package sawn on foil
Mechanical Parameters
Die size Area total
3.
2 x 3.
2 10.
24
mm2
Anode pad size
2.
48 x 2.
48
Thickness
120
µm
Wafer size
200
mm
Max.
possible chips per wafer
2676
Passivation frontside
Photoimide
Pad metal Backside me...
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