SIDC03D120H8 Fast switching diode chip in Emitter Controlled Technology Features:  1200V Emitter Controlled technology 120 µm chip  Soft, fast switching  Low reverse recovery charge  Small temperature coefficient  Qualified according to JEDEC for target applications Recommended for:  Power modules and discrete devices Applications:  SMPS, resonant applications, drives Chip Type VR IFn SIDC03D120H8 1200V 3A Die Size 1.
75 x 1.
85 mm2 Package sawn on foil Mechanical Parameters Die size Area total 1.
75 x 1.
85 3.
24 mm2 Anode pad size 1.
03 x 1.
13 Thickness 120 µm Wafer size 200 mm Max.
possible chips per wafer 8702 Passivation frontside Photoimide Pad metal 3200 nm ...

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