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DF160R12W2H3F_B11

Part Number DF160R12W2H3F_B11
Manufacturer Infineon
Description IGBT
Published Jun 11, 2020
Detailed Description DF160R12W2H3F_B11 EasyPACKModulmitschnellemTrench/FeldstoppHigh-Speed3IGBTundSiCDiodeundPressFIT/NTC EasyP...
Datasheet DF160R12W2H3F_B11





Overview
DF160R12W2H3F_B11 EasyPACKModulmitschnellemTrench/FeldstoppHigh-Speed3IGBTundSiCDiodeundPressFIT/NTC EasyPACKmodulewithfastTrench/FieldstopHigh-Speed3IGBTandSiCdiodeandPressFIT/NTC TypischeAnwendungen • SolarAnwendungen ElektrischeEigenschaften • CoolSiC(TM)SchottkyDiodeGen5 • HighSpeedIGBTH3 • NiedrigeSchaltverluste • thinQHSiCSchottky-Diode1200V MechanischeEigenschaften • 3kVAC1minIsolationsfestigkeit • Al2O3 Substrat mit kleinem thermischen Widerstand • IntegrierterNTCTemperaturSensor • KompaktesDesign • PressFITVerbindungstechnik J VCES = 1200V IC nom = 160A / ICRM = 320A TypicalApplications • Solarapplications ElectricalFeatures...






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