2N5461

2N5460 : MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N5460/D JFET Amplifiers P–Channel — Depletion 3 GATE 2 DRAIN 2N5460 thru 2N5462 1 SOURCE MAXIMUM RATINGS Rating Drain – Gate Voltage Reverse Gate – Source Voltage Forward Gate Current Total Device Dissipation @ TA = 25°C Derate above 25°C Junction Temperature Range Storage Channel Temperature Range Symbol VDG VGSR IG(f) PD TJ Tstg Value 40 40 10 350 2.8 – 65 to +135 – 65 to +150 Unit Vdc Vdc mAdc mW mW/°C °C °C 1 2 3 CASE 29–04, STYLE 7 TO–92 (TO–226AA) ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Gate – Source Breakdown Voltage (IG = 10 µAdc, V.

2N5460 : www.DataSheet4U.com 2N5460, 2N5461, 2N5462 JFET Amplifier P−Channel − Depletion Features • Pb−Free Packages are Available* MAXIMUM RATINGS Rating Drain − Gate Voltage Reverse Gate − Source Voltage Forward Gate Current Total Device Dissipation @ TA = 25°C Derate above 25°C Junction Temperature Range Storage Channel Temperature Range Symbol VDG VGSR IG(f) PD TJ Tstg Value 40 40 10 350 2.8 −65 to +135 −65 to +150 Unit Vdc Vdc mAdc mW mW/°C °C °C http://onsemi.com 2 DRAIN 3 GATE 1 SOURCE Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stres.

2N5460 : TO-18 OPTION STD TO-5 OPTION STD TO-92 STANDARD STRAIGHT LEADCLIP DIMENSION NO LEAD CLIP NO LEAD CLIP NO LEADCLIP QUANTITY 2.0 K / BOX 1.5 K / BOX 2.0 K / BOX BULK OPTION See Bulk Packing Information table Anti-static Bubble Sheets FSCINT Label 2000 units per EO70 box for std option 114mm x 102mm x 51mm Immediate Box 5 EO70 boxes per intermediate Box 530mm x 130mm x 83mm Intermediate box Customized Label FSCINT Label 10,000 units maximum per intermediate box for std option September 1999, Rev. B TO-92 Tape and Reel Data and Package Dimensions, continued TO-92 Reeling Style Configuration: Figure 2.0 Machine Option “A” (H) Machine Option “E” (J) Style “A”, D26Z, D70Z (s/h) Style “E”.

2N5460 : The 40V InterFET 2N5460, 2N5461, and 2N5462 JFET’s are targeted for sensitive amplifier stages for mid-frequencies designs. Input capacitance is typically 3.2pF. The 2N5462 is target for higher gain applications with a typical Gfs of 3.5mS. Source 1 Drain 2 SOT23 Top View 3 Gate TO-92 Bottom View Gate 3 Drain 2 Source 1 Product Summary Parameters BVGSS Gate to Source Breakdown Voltage IDSS Drain to Source Saturation Current VGS(off) Gate to Source Cutoff Voltage GFS Forward Transconductance 2N5460 Min 40 -1 0.75 1000 2N5461 Min 40 -2 1 1500 2N5462 Min Unit 40 V -4 mA 1.8 V 2000 μS Ordering Information Custom Part and Binning Options Available Part Number Description 2N546.

2N5460 : p-channel JFET designed for. • • • Amplifiers • Analog Switches ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise noted Drain-Gate or Source-Gate Voltage 2N5460 - 2N5462 ....•.. 40V 2N5463 - 2N5465 ..••... 60V Gate Current ..•....10 rnA Storage Temperature Range ..... -65°C to +200°C Operating Temperature Range .••. -55°C to +150°C Lead Temperature (Soldering. 10 sec.) ..... +300°C Power Dissipation 310 mW Derate Above 25°C .... 2.8 mW/oC .H Siliconix BENEFITS • Low Cost • Automated Insertion Package • Low Capacitance PIN CONFIGURATION TO-92 [).

2N5460 : The 2N/SST5460 series are p-channel JFETs designed to provide all-around performance in a wide range of amplifier and analog switch applications. The 2N series, TO-226AA (TO-92), and SST series, TO-236 (SOT-23), plastic packages provide low cost options, and are available in tape-and-reel for automated assembly, (see Packaging Information). TO-226AA (TO-92).

2N5460 : 2N5460 Silicon P−Channel JFET Transistor General Purpose AF Amplifier TO92 Type Package Absolute Maximum Ratings: (TA = +25C unless otherwise specified) Drain−Gate Voltage, VDG . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V Reverse Gate−Source Voltage, VGSR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V Forward Gate Current, IG(f) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10mA Total Device Dissipation (TA = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

2N5460 : 2N5460 2N5461 2N5462 SILICON P-CHANNEL JFETS w w w. c e n t r a l s e m i . c o m The CENTRAL SEMICONDUCTOR 2N5460, 2N5461, and 2N5462 are silicon P-Channel JFETs designed for low level amplifier applications. MARKING: FULL PART NUMBER TO-92 CASE MAXIMUM RATINGS: (TA=25°C) Drain-Gate Voltage Reverse Gate-Source Voltage Continuous Gate Current Power Dissipation Operating and Storage Junction Temperature SYMBOL VDG VGSR IG PD TJ, Tstg 40 40 10 310 -65 to +150 ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) 2N5460 2N5461 SYMBOL TEST CONDITIONS MIN MAX MIN MAX IGSS VGS=20V - 5.0 - 5.0 IGSS VGS=20V, TA=100°C - 1.0 - 1.0 IDSS VDS=15V, f=1.0kHz 1.0 5.0 2.0 9.0 B.

2N5461 : TO-18 OPTION STD TO-5 OPTION STD TO-92 STANDARD STRAIGHT LEADCLIP DIMENSION NO LEAD CLIP NO LEAD CLIP NO LEADCLIP QUANTITY 2.0 K / BOX 1.5 K / BOX 2.0 K / BOX BULK OPTION See Bulk Packing Information table Anti-static Bubble Sheets FSCINT Label 2000 units per EO70 box for std option 114mm x 102mm x 51mm Immediate Box 5 EO70 boxes per intermediate Box 530mm x 130mm x 83mm Intermediate box Customized Label FSCINT Label 10,000 units maximum per intermediate box for std option September 1999, Rev. B TO-92 Tape and Reel Data and Package Dimensions, continued TO-92 Reeling Style Configuration: Figure 2.0 Machine Option “A” (H) Machine Option “E” (J) Style “A”, D26Z, D70Z (s/h) Style “E”.

2N5461 : MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N5460/D JFET Amplifiers P–Channel — Depletion 3 GATE 2 DRAIN 2N5460 thru 2N5462 1 SOURCE MAXIMUM RATINGS Rating Drain – Gate Voltage Reverse Gate – Source Voltage Forward Gate Current Total Device Dissipation @ TA = 25°C Derate above 25°C Junction Temperature Range Storage Channel Temperature Range Symbol VDG VGSR IG(f) PD TJ Tstg Value 40 40 10 350 2.8 – 65 to +135 – 65 to +150 Unit Vdc Vdc mAdc mW mW/°C °C °C 1 2 3 CASE 29–04, STYLE 7 TO–92 (TO–226AA) ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Gate – Source Breakdown Voltage (IG = 10 µAdc, V.

2N5461 : www.DataSheet4U.com 2N5460, 2N5461, 2N5462 JFET Amplifier P−Channel − Depletion Features • Pb−Free Packages are Available* MAXIMUM RATINGS Rating Drain − Gate Voltage Reverse Gate − Source Voltage Forward Gate Current Total Device Dissipation @ TA = 25°C Derate above 25°C Junction Temperature Range Storage Channel Temperature Range Symbol VDG VGSR IG(f) PD TJ Tstg Value 40 40 10 350 2.8 −65 to +135 −65 to +150 Unit Vdc Vdc mAdc mW mW/°C °C °C http://onsemi.com 2 DRAIN 3 GATE 1 SOURCE Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stres.

2N5461 : The 2N/SST5460 series are p-channel JFETs designed to provide all-around performance in a wide range of amplifier and analog switch applications. The 2N series, TO-226AA (TO-92), and SST series, TO-236 (SOT-23), plastic packages provide low cost options, and are available in tape-and-reel for automated assembly, (see Packaging Information). TO-226AA (TO-92).

2N5461 : 2N5460 2N5461 2N5462 SILICON P-CHANNEL JFETS w w w. c e n t r a l s e m i . c o m The CENTRAL SEMICONDUCTOR 2N5460, 2N5461, and 2N5462 are silicon P-Channel JFETs designed for low level amplifier applications. MARKING: FULL PART NUMBER TO-92 CASE MAXIMUM RATINGS: (TA=25°C) Drain-Gate Voltage Reverse Gate-Source Voltage Continuous Gate Current Power Dissipation Operating and Storage Junction Temperature SYMBOL VDG VGSR IG PD TJ, Tstg 40 40 10 310 -65 to +150 ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) 2N5460 2N5461 SYMBOL TEST CONDITIONS MIN MAX MIN MAX IGSS VGS=20V - 5.0 - 5.0 IGSS VGS=20V, TA=100°C - 1.0 - 1.0 IDSS VDS=15V, f=1.0kHz 1.0 5.0 2.0 9.0 B.

2N5461 : p-channel JFET designed for. • • • Amplifiers • Analog Switches ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise noted Drain-Gate or Source-Gate Voltage 2N5460 - 2N5462 ....•.. 40V 2N5463 - 2N5465 ..••... 60V Gate Current ..•....10 rnA Storage Temperature Range ..... -65°C to +200°C Operating Temperature Range .••. -55°C to +150°C Lead Temperature (Soldering. 10 sec.) ..... +300°C Power Dissipation 310 mW Derate Above 25°C .... 2.8 mW/oC .H Siliconix BENEFITS • Low Cost • Automated Insertion Package • Low Capacitance PIN CONFIGURATION TO-92 [).

2N5462 : .

2N5462 : MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N5460/D JFET Amplifiers P–Channel — Depletion 3 GATE 2 DRAIN 2N5460 thru 2N5462 1 SOURCE MAXIMUM RATINGS Rating Drain – Gate Voltage Reverse Gate – Source Voltage Forward Gate Current Total Device Dissipation @ TA = 25°C Derate above 25°C Junction Temperature Range Storage Channel Temperature Range Symbol VDG VGSR IG(f) PD TJ Tstg Value 40 40 10 350 2.8 – 65 to +135 – 65 to +150 Unit Vdc Vdc mAdc mW mW/°C °C °C 1 2 3 CASE 29–04, STYLE 7 TO–92 (TO–226AA) ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Gate – Source Breakdown Voltage (IG = 10 µAdc, V.